2SA1869-Y(JKT,Q,M)

Toshiba Semiconductor and Storage

Product No:

2SA1869-Y(JKT,Q,M)

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TO-220NIS

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Description:

TRANS PNP 50V 3A TO220NIS

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Operating Temperature	150°C (TJ)
Frequency - Transition	100MHz
Current - Collector (Ic) (Max)	3 A
Vce Saturation (Max) @ Ib, Ic	600mV @ 200mA, 2A
Mounting Type	Through Hole
Product Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	TO-220NIS
Series	-
Transistor Type	PNP
Package / Case	TO-220-3 Full Pack
Power - Max	10 W
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	1µA (ICBO)
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 500mA, 2V
Base Product Number	2SA1869