2SA812B-T1B-AT

Renesas

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2SA812B-T1B-AT

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3-MINIMOLD

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2SA812B-T1B-AT - PNP SILICON EPI

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Operating Temperature	150°C (TJ)
Frequency - Transition	180MHz
Current - Collector (Ic) (Max)	100 mA
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Mounting Type	Surface Mount
Product Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	3-MINIMOLD
Series	-
Transistor Type	PNP
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	200 mW
Mfr	Renesas
Current - Collector Cutoff (Max)	100nA (ICBO)
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 1mA, 6V