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APTM120A80FT1G

Microsemi Corporation

Product No:

APTM120A80FT1G

Manufacturer:

Microsemi Corporation

Package:

SP1

Batch:

-

Datasheet:

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Description:

MOSFET 2N-CH 1200V 14A SP1

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 6696pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 960mOhm @ 12A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 5V @ 2.5mA
Supplier Device Package SP1
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Series -
Package / Case SP1
Technology MOSFET (Metal Oxide)
Power - Max 357W
Mfr Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C 14A
Package Bulk
Base Product Number APTM120