BAS16LTH-G3-08

Vishay General Semiconductor - Diodes Division

Product No:

BAS16LTH-G3-08

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Package:

DFN1006-2A

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Description:

DIODE GP 100V 250MA DFN1006-2A

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	0.36pF @ 0V, 1MHz
Reverse Recovery Time (trr)	4 ns
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	DFN1006-2A
Current - Reverse Leakage @ Vr	1 µA @ 100 V
Series	Automotive, AEC-Q101
Package / Case	0402 (1006 Metric)
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.25 V @ 150 mA
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	100 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	250mA
Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	BAS16