ES6U2T2R

Rohm Semiconductor

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ES6U2T2R

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Package:

6-WEMT

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Description:

MOSFET N-CH 20V 1.5A 6WEMT

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Operating Temperature	150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	1.8 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	180mOhm @ 1.5A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	6-WEMT
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	700mW (Ta)
Series	-
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	ES6U2