F1T1G

Taiwan Semiconductor Corporation

Product No:

F1T1G

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Package:

TS-1

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Description:

DIODE GEN PURP 50V 1A TS-1

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	15pF @ 4V, 1MHz
Reverse Recovery Time (trr)	150 ns
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TS-1
Current - Reverse Leakage @ Vr	5 µA @ 50 V
Series	-
Package / Case	T-18, Axial
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 1 A
Mfr	Taiwan Semiconductor Corporation
Voltage - DC Reverse (Vr) (Max)	50 V
Package	Tape & Reel (TR)
Operating Temperature - Junction	-55°C ~ 150°C
Current - Average Rectified (Io)	1A