FCD9N60NTM

Fairchild Semiconductor

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FCD9N60NTM

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TO-252, (D-Pak)

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Description:

POWER FIELD-EFFECT TRANSISTOR, 9

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	17.8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	385mOhm @ 4.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-252, (D-Pak)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	92.6W (Tc)
Series	SupreMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk