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FCH190N65F-F085

Fairchild Semiconductor

Product No:

FCH190N65F-F085

Package:

TO-247

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 20.6A TO247-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3181 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 190mOhm @ 27A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-247
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 208W (Tc)
Series Automotive, AEC-Q101, SuperFET® II
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 20.6A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk