FCU4300N80Z

Fairchild Semiconductor

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FCU4300N80Z

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I-PAK

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MOSFET N-CH 800V 1.6A I-PAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	355 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	8.8 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4.3Ohm @ 800mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 160µA
Supplier Device Package	I-PAK
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	27.8W (Tc)
Series	SuperFET® II
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk