FDB6021P

Fairchild Semiconductor

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FDB6021P

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Package:

D2PAK (TO-263)

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Description:

MOSFET P-CH 20V 28A TO263AB

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Operating Temperature	-65°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	30mOhm @ 14A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	D2PAK (TO-263)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	37W (Tc)
Series	PowerTrench®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	28A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Bulk