FDB8444TS

Fairchild Semiconductor

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FDB8444TS

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Package:

TO-263-5

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Description:

MOSFET N-CH 40V 20A/70A TO263-5

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	338 nC @ 20 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5mOhm @ 70A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-263-5
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	181W (Tc)
Series	PowerTrench®
Package / Case	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	20A (Ta), 70A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk