FDC633N

Fairchild Semiconductor

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FDC633N

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SuperSOT™-6

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Description:

MOSFET N-CH 30V 5.2A SUPERSOT6

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	538 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	42mOhm @ 5.2A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	SuperSOT™-6
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.6W (Ta)
Series	-
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	5.2A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Bulk