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FDD6670A

Fairchild Semiconductor

Product No:

FDD6670A

Package:

TO-252AA

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1755 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package TO-252AA
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.2W (Ta), 63W (Tc)
Series PowerTrench®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 66A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk