FDD850N10LD

Fairchild Semiconductor

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FDD850N10LD

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Package:

TO-252-4

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Description:

MOSFET N-CH 100V 15.3A TO252-4

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1465 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	28.9 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	75mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-252-4
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	42W (Tc)
Series	PowerTrench®
Package / Case	TO-252-5, DPak (4 Leads + Tab), TO-252AD
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	15.3A (Tc)
Vgs (Max)	±20V
Package	Bulk