FDFMA2P859T

Fairchild Semiconductor

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FDFMA2P859T

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MicroFET 2x2 Thin

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Description:

MOSFET P-CH 20V 3A MICROFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	435 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	120mOhm @ 3A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.3V @ 250µA
Supplier Device Package	MicroFET 2x2 Thin
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.4W (Ta)
Series	PowerTrench®
Package / Case	6-UDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Bulk