FDMD8900

Fairchild Semiconductor

Product No:

FDMD8900

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Package:

12-Power3.3x5

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Description:

POWER FIELD-EFFECT TRANSISTOR, N

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	2605pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4mOhm @ 19A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	12-Power3.3x5
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	12-PowerWDFN
Technology	MOSFET (Metal Oxide)
Power - Max	2.1W
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	19A, 17A
Package	Bulk
Base Product Number	FDMD89