FESB16HTHE3_A/P

Vishay General Semiconductor - Diodes Division

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FESB16HTHE3_A/P

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Package:

TO-263AB (D²PAK)

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Description:

DIODE GEN PURP 500V 16A TO263AB

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	145pF @ 4V, 1MHz
Reverse Recovery Time (trr)	50 ns
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	TO-263AB (D²PAK)
Current - Reverse Leakage @ Vr	10 µA @ 500 V
Series	Automotive, AEC-Q101
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.5 V @ 16 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	500 V
Package	Tube
Operating Temperature - Junction	-65°C ~ 150°C
Current - Average Rectified (Io)	16A