FESB8ATHE3_A/P

Vishay General Semiconductor - Diodes Division

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FESB8ATHE3_A/P

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TO-263AB (D²PAK)

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Description:

DIODE GEN PURP 50V 8A TO263AB

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Speed	Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F	85pF @ 4V, 1MHz
Reverse Recovery Time (trr)	35 ns
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	TO-263AB (D²PAK)
Current - Reverse Leakage @ Vr	10 µA @ 50 V
Series	Automotive, AEC-Q101
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	950 mV @ 8 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	50 V
Package	Tube
Operating Temperature - Junction	-55°C ~ 150°C
Current - Average Rectified (Io)	8A