FF4MR12W2M1HB11BPSA1

Infineon Technologies

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Module

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EASYDUAL MODULE WITH COOLSIC TRE

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Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	Silicon Carbide (SiC)
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	17600pF @ 800V
Gate Charge (Qg) (Max) @ Vgs	594nC @ 18V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	4mOhm @ 200A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.15V @ 80mA
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	CoolSiC™
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	-
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	170A (Tj)
Package	Tray
Base Product Number	FF4MR12