FF8MR12W1M1HS4PB11BPSA1

Infineon Technologies

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AG-EASY1B

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LOW POWER EASY

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	Silicon Carbide (SiC)
Configuration	2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8800pF @ 800V
Gate Charge (Qg) (Max) @ Vgs	297nC @ 18V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	8.1mOhm @ 100A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.15V @ 40mA
Supplier Device Package	AG-EASY1B
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	CoolSiC™
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	-
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	100A (Tj)
Package	Tray
Base Product Number	FF8MR12