Goford Semiconductor
Product No:
G12P03D3
Manufacturer:
Package:
8-DFN (3.15x3.05)
Batch:
-
Description:
P30V,RD(MAX)<20M@-10V,RD(MAX)<26
Quantity:
Delivery:
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
FET Type | P-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 1253 pF @ 15 V |
Gate Charge (Qg) (Max) @ Vgs | 24.5 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 20mOhm @ 6A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Supplier Device Package | 8-DFN (3.15x3.05) |
Drain to Source Voltage (Vdss) | 30 V |
Power Dissipation (Max) | 3W (Tc) |
Series | - |
Package / Case | 8-PowerVDFN |
Technology | MOSFET (Metal Oxide) |
Mfr | Goford Semiconductor |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |