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G12P03D3

Goford Semiconductor

Product No:

G12P03D3

Manufacturer:

Goford Semiconductor

Package:

8-DFN (3.15x3.05)

Batch:

-

Datasheet:

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Description:

P30V,RD(MAX)<20M@-10V,RD(MAX)<26

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1253 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 24.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 20mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package 8-DFN (3.15x3.05)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3W (Tc)
Series -
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)