G16N03S

Goford Semiconductor

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G16N03S

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8-SOP

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N30V, 16A,RD<10M@10V,VTH1.0V~2.5

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	16.6 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-SOP
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.5W (Tc)
Series	G
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tape & Reel (TR)