minImg

G4S06530BT

Global Power Technology-GPT

Product No:

G4S06530BT

Package:

TO-247AB

Batch:

-

Datasheet:

pdf.png

Description:

SIC SCHOTTKY DIODE 650V 30A 3-PI

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif10

Product Information

Parameter Info

User Guide

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Mounting Type Through Hole
Product Status Active
Supplier Device Package TO-247AB
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Series -
Package / Case TO-247-3
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 15 A
Diode Configuration 1 Pair Common Cathode
Mfr Global Power Technology-GPT
Voltage - DC Reverse (Vr) (Max) 650 V
Package Cut Tape (CT)
Current - Average Rectified (Io) (per Diode) 39A (DC)
Operating Temperature - Junction -55°C ~ 175°C