GB01SLT12-252

GeneSiC Semiconductor

Product No:

GB01SLT12-252

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Package:

TO-252

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Description:

DIODE SIL CARBIDE 1.2KV 1A TO252

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Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	69pF @ 1V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Surface Mount
Product Status	Obsolete
Supplier Device Package	TO-252
Current - Reverse Leakage @ Vr	2 µA @ 1200 V
Series	SiC Schottky MPS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 1 A
Mfr	GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max)	1200 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	1A
Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	GB01SLT12