GF1KHE3_A/H

Vishay General Semiconductor - Diodes Division

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GF1KHE3_A/H

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DO-214BA (GF1)

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Description:

DIODE GEN PURP 800V 1A DO214BA

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Speed	Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F	15pF @ 4V, 1MHz
Reverse Recovery Time (trr)	2 µs
Mounting Type	Surface Mount
Product Status	Preliminary
Supplier Device Package	DO-214BA (GF1)
Current - Reverse Leakage @ Vr	5 µA @ 800 V
Series	Automotive, AEC-Q101, Superectifier®
Package / Case	DO-214BA
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.2 V @ 1 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	800 V
Package	Tape & Reel (TR)
Operating Temperature - Junction	-65°C ~ 175°C
Current - Average Rectified (Io)	1A