HER601G

Taiwan Semiconductor Corporation

Product No:

HER601G

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Package:

R-6

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Description:

DIODE GEN PURP 50V 6A R-6

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	80pF @ 4V, 1MHz
Reverse Recovery Time (trr)	50 ns
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	R-6
Current - Reverse Leakage @ Vr	10 µA @ 50 V
Series	-
Package / Case	R-6, Axial
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1 V @ 6 A
Mfr	Taiwan Semiconductor Corporation
Voltage - DC Reverse (Vr) (Max)	50 V
Package	Tape & Reel (TR)
Operating Temperature - Junction	-55°C ~ 150°C
Current - Average Rectified (Io)	6A