HN1C01FU-GR,LF

Toshiba Semiconductor and Storage

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HN1C01FU-GR,LF

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US6

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Description:

TRANS 2NPN 50V 0.15A US6

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Operating Temperature	125°C (TJ)
Frequency - Transition	80MHz
Current - Collector (Ic) (Max)	150mA
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50V
Supplier Device Package	US6
Series	-
Transistor Type	2 NPN (Dual)
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max	200mW
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	100nA (ICBO)
Package	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Base Product Number	HN1C01