HP8KE6TB1

Rohm Semiconductor

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HP8KE6TB1

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Package:

8-HSOP

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100V 17A, DUAL NCH+NCH, HSOP8, P

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Operating Temperature	150°C (TJ)
FET Feature	Standard
Configuration	2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds	305pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	6.7nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	54mOhm @ 6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-HSOP
Drain to Source Voltage (Vdss)	100V
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Power - Max	3W (Ta), 21W (Tc)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	6A (Ta), 17A (Tc)
Package	Tape & Reel (TR)