IAUC120N06S5N011ATMA1

Infineon Technologies

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PG-TDSON-8-53

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MOSFET_)40V 60V)

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9822 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	137 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.12mOhm @ 60A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.4V @ 130µA
Supplier Device Package	PG-TDSON-8-53
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	188W (Tc)
Series	OptiMOS™-5
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	310A (Tj)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tape & Reel (TR)