IAUCN04S7N004ATMA1

Infineon Technologies

Product No:

IAUCN04S7N004ATMA1

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Package:

PG-TDSON-8-53

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Description:

MOSFET_(20V 40V)

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	11310 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	169 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.44mOhm @ 88A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 130µA
Supplier Device Package	PG-TDSON-8-53
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	219W (Tc)
Series	Automotive, AEC-Q101, OptiMOS™ 7
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	175A
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tape & Reel (TR)