IMZA120R030M1HXKSA1

Infineon Technologies

Product No:

IMZA120R030M1HXKSA1

Manufacturer:

Package:

PG-TO247-4-U02

Batch:

Datasheet:

Description:

SIC DISCRETE

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2160 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	40.9mOhm @ 25.6A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.2V @ 11mA
Supplier Device Package	PG-TO247-4-U02
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	273W (Tc)
Series	CoolSiC™
Package / Case	TO-247-4
Technology	SiC (Silicon Carbide Junction Transistor)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Vgs (Max)	+20V, -7V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube