IPA80R650CEXKSA1

Infineon Technologies

Product No:

IPA80R650CEXKSA1

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Package:

PG-TO220-FP

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Description:

MOSFET N-CH 800V 4.5A TO220

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	650mOhm @ 5.1A, 10V
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	3.9V @ 470µA
Supplier Device Package	PG-TO220-FP
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	33W (Tc)
Series	CoolMOS™ CE
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPA80R