IPG20N06S4L11ATMA2

Infineon Technologies

Product No:

IPG20N06S4L11ATMA2

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Package:

PG-TDSON-8-10

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Description:

MOSFET_)40V 60V)

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	4020pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	53nC @ 10V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	11.2mOhm @ 17A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 28µA
Supplier Device Package	PG-TDSON-8-10
Drain to Source Voltage (Vdss)	60V
Series	Automotive, AEC-Q101, OptiMOS™
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	65W (Tc)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Package	Tape & Reel (TR)
Base Product Number	IPG20N