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IPP60R022S7XKSA1

Infineon Technologies

Product No:

IPP60R022S7XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 23A TO220-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 5639 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 12 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 22mOhm @ 23A, 12V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 1.44mA
Supplier Device Package PG-TO220-3-1
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 390W (Tc)
Series CoolMOS™S7
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 12V
Package Tube
Base Product Number IPP60R022