IPW60R125P6

Infineon Technologies

Product No:

IPW60R125P6

Manufacturer:

Package:

PG-TO247-3

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2660 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	125mOhm @ 11.6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 960µA
Supplier Device Package	PG-TO247-3
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	219W (Tc)
Series	CoolMOS™
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk