IRF8313TRPBF

International Rectifier

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IRF8313TRPBF

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8-SO

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IRF8313 - HEXFET POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	760pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	9nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	15.5mOhm @ 9.7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.35V @ 25µA
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	30V
Series	HEXFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	2W
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	9.7A
Package	Bulk
Base Product Number	IRF8313