IRFB9N65APBF-BE3

Vishay Siliconix

Product No:

IRFB9N65APBF-BE3

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Package:

TO-220AB

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Description:

MOSFET N-CH 650V 8.5A TO220AB

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	930mOhm @ 5.1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	167W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	8.5A (Tc)
Vgs (Max)	±30V
Package	Tube
Base Product Number	IRFB9