IRFH4257DTRPBF

International Rectifier

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IRFH4257DTRPBF

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Dual PQFN (5x4)

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IRFH4257 - HEXFET POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	1321pF @ 13V
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.4mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 35µA
Supplier Device Package	Dual PQFN (5x4)
Drain to Source Voltage (Vdss)	25V
Series	HEXFET®
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	25W, 28W
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	25A
Package	Bulk
Base Product Number	IRFH4257