KBP306G C2

Taiwan Semiconductor Corporation

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KBP306G C2

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KBP

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Description:

BRIDGE RECT 1PHASE 800V 3A KBP

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Operating Temperature	-55°C ~ 150°C (TJ)
Voltage - Peak Reverse (Max)	800 V
Diode Type	Single Phase
Mounting Type	Through Hole
Product Status	Obsolete
Supplier Device Package	KBP
Current - Reverse Leakage @ Vr	10 µA @ 800 V
Series	-
Package / Case	4-SIP, KBP
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 3 A
Mfr	Taiwan Semiconductor Corporation
Package	Tube
Current - Average Rectified (Io)	3 A