MBR600200CT

GeneSiC Semiconductor

Product No:

MBR600200CT

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Package:

Twin Tower

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Description:

DIODE SCHOTTKY 200V 300A 2 TOWER

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Chassis Mount
Product Status	Active
Supplier Device Package	Twin Tower
Current - Reverse Leakage @ Vr	3 mA @ 200 V
Series	-
Package / Case	Twin Tower
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If	920 mV @ 300 A
Diode Configuration	1 Pair Common Cathode
Mfr	GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max)	200 V
Package	Bulk
Current - Average Rectified (Io) (per Diode)	300A
Operating Temperature - Junction	-55°C ~ 150°C
Base Product Number	MBR600200