MSCSM120AM027CD3AG

Microchip Technology

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MSCSM120AM027CD3AG

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PM-MOSFET-SIC-SBD~-D3

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Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
Configuration	2 N Channel (Phase Leg)
Input Capacitance (Ciss) (Max) @ Vds	27000pF @1000V
Gate Charge (Qg) (Max) @ Vgs	2088nC @ 20V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	3.5mOhm @ 360A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 9mA
Supplier Device Package	D3
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	2.97kW (Tc)
Mfr	Microchip Technology
Current - Continuous Drain (Id) @ 25°C	733A (Tc)
Package	Box
Base Product Number	MSCSM120