MSCSM120HM083AG

Microchip Technology

Product No:

MSCSM120HM083AG

Manufacturer:

Package:

Batch:

Datasheet:

Description:

PM-MOSFET-SIC-SP6C

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
Configuration	4 N-Channel (Full Bridge)
Input Capacitance (Ciss) (Max) @ Vds	9000pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs	696nC @ 20V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	10.4mOhm @ 120A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 9mA
Supplier Device Package	-
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	1.042kW (Tc)
Mfr	Microchip Technology
Current - Continuous Drain (Id) @ 25°C	251A (Tc)
Package	Bulk
Base Product Number	MSCSM120