MSCSM120HM16CTBL3NG

Microchip Technology

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MSCSM120HM16CTBL3NG

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PM-MOSFET-SIC-SBD-BL3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Configuration	4 N-Channel (Phase Leg)
Input Capacitance (Ciss) (Max) @ Vds	6040pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs	464nC @ 20V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	16mOhm @ 80A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 2mA
Supplier Device Package	-
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	560W
Mfr	Microchip Technology
Current - Continuous Drain (Id) @ 25°C	150A
Package	Bulk
Base Product Number	MSCSM120