MSCSM120HRM311AG

Microchip Technology

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MSCSM120HRM311AG

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PM-MOSFET-SIC- SP1F

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Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	Silicon Carbide (SiC)
Configuration	4 N-Channel (Three Level Inverter)
Input Capacitance (Ciss) (Max) @ Vds	3020pF @ 1000V, 4500pF @ 700V
Gate Charge (Qg) (Max) @ Vgs	232nC @ 20V, 215nC @ 20V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 3mA, 2.4V @ 4mA
Supplier Device Package	-
Drain to Source Voltage (Vdss)	1200V (1.2kV), 700V
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	395W (Tc), 365W (Tc)
Mfr	Microchip Technology
Current - Continuous Drain (Id) @ 25°C	89A (Tc), 124A (Tc)
Package	Bulk