MSCSM170AM029CT6LIAG

Microchip Technology

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PM-MOSFET-SIC-SBD-SP3F

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Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
Configuration	2 N Channel (Phase Leg)
Input Capacitance (Ciss) (Max) @ Vds	39600pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs	2136nC @ 20V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	3.75mOhm @ 360A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	3.3V @ 30mA
Supplier Device Package	-
Drain to Source Voltage (Vdss)	1700V (1.7kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	3kW (Tc)
Mfr	Microchip Technology
Current - Continuous Drain (Id) @ 25°C	676A (Tc)
Package	Bulk
Base Product Number	MSCSM170