NTHC5513T1G

onsemi

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NTHC5513T1G

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ChipFET™

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Description:

MOSFET N/P-CH 20V CHIPFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	80mOhm @ 2.9A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.2V @ 250µA
Supplier Device Package	ChipFET™
Drain to Source Voltage (Vdss)	20V
Series	-
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Power - Max	1.1W
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	2.9A, 2.2A
Package	Tape & Reel (TR)
Base Product Number	NTHC5513