NXH010P120MNF1PG

onsemi

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NXH010P120MNF1PG

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PIM F1 SIC HALFBRIDGE 1200V 10MO

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual) Common Source
Input Capacitance (Ciss) (Max) @ Vds	4707pF @ 800V
Gate Charge (Qg) (Max) @ Vgs	454nC @ 20V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	14mOhm @ 100A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 40mA
Supplier Device Package	-
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	250W (Tj)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	114A (Tc)
Package	Tray
Base Product Number	NXH010