PJQ4606_R1_00001

Panjit International Inc.

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PJQ4606_R1_00001

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Package:

DFN3030B-8

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Description:

30V COMPLEMENTARY ENHANCEMENT MO

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	N and P-Channel Complementary
Input Capacitance (Ciss) (Max) @ Vds	429pF @ 25V, 846pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	4.8nC @ 4.5V, 7.8nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	DFN3030B-8
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Power - Max	2W (Ta), 18W (Tc)
Mfr	Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C	7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc)
Package	Tape & Reel (TR)
Base Product Number	PJQ4606