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PJQ5606_R2_00001

Panjit International Inc.

Product No:

PJQ5606_R2_00001

Package:

DFN5060B-8

Batch:

-

Datasheet:

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Description:

30V COMPLEMENTARY ENHANCEMENT MO

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration N and P-Channel Complementary
Input Capacitance (Ciss) (Max) @ Vds 429pF @ 25V, 846pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 4.5V, 7.8nC @ 4.5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package DFN5060B-8
Drain to Source Voltage (Vdss) 30V
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Power - Max 1.7W (Ta), 21W (Tc)
Mfr Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Package Tape & Reel (TR)
Base Product Number PJQ5606