PMBD6050,215

NXP Semiconductors

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PMBD6050,215

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TO-236AB

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Description:

DIODE GEN PURP 70V 215MA TO236AB

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr)	4 ns
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	TO-236AB
Current - Reverse Leakage @ Vr	100 nA @ 50 V
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.25 V @ 150 mA
Mfr	NXP Semiconductors
Voltage - DC Reverse (Vr) (Max)	70 V
Package	Bulk
Operating Temperature - Junction	150°C (Max)
Current - Average Rectified (Io)	215mA